Thermal Behavior Investigation of Cascode GaN HEMTs
نویسندگان
چکیده
This paper presents the evaluation of heat generation behavior and related thermal measurement analysis of packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) cascaded with low-voltage MOSFET and SiC SBD. Since thermal management is extremely important for high power packaging, a hybrid integration of the GaN HEMTs onto a DBC substrate and metal case is proposed. We investigate the temperature performance of cascode GaN HEMTs by thermal simulations in comparison to the experimental results by using infrared thermography. For a power dissipation under 11.8 W, the peak temperature of the GaN HEMTs is 118.7 ̊C.
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